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Product Datasheet
January 21, 2002
18-27 GHz 1W Power Amplifier
Key Features
* * * * * * *
TGA1135B-SCC
0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 480 mA On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
* * * Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA
Product Description
The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA11135B is designed to support a variety of millimeter wave applications including point-topoint digital radio and LMDS/LMCS. The balanced configuration two stage design consists of a pair of 600um input devices driving a 4 x 600um output stage. Power combining is achieved with on-chip Lange couplers. The TGA1135B-SCC provides 29 dBm nominal output power at 1dB compression across 18 - 27GHz. Typical small signal gain is 14 dB across the band. Input and output return loss is typically -15dB. An on-chip power detector and reference diode may be used for power monitoring/control and bias control loops.
P1dB (dBm)
S21 (dB)
18 16 14 12 10 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz)
Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz
VD = 7V
The TGA1135B-SCC requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
VD = 6V
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
January 21, 2002
TGA1135B-SCC
TABLE I MAXIMUM RATINGS SYMBOL V I I
+ + -
PARAMETER 4/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VALUE 8V 720 mA 28.2 mA 23 dBm 5.0 W 150 0C 320 0C -65 to 150 0C
NOTES 1/
PIN PD TCH TM T STG
2/ 3/
1/ 2/ 3/ 4/
Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings represent the maximum operable values for the device.
TABLE II DC SPECIFICATIONS (100%) (T A = 25 C + 5 C) NOTES SYMBOL IDSS1 GM1 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3-6| |VBVGD1| |VBVGS1| VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer). TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD 60 132 0.5 0.5 0.5 13 13 LIMITS MAX 282 318 1.5 1.5 1.5 30 30 mA mS V V V V V UNITS
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Product Datasheet
January 21, 2002
TGA1135B-SCC
TABLE IV RF SPECIFICATIONS (T A = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 7V @ 460mA 18 - 27 GHz 18 - 27 GHz VALUE MIN 12 27 TYP 14 29 MAX dB dBm UNITS
SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE 1/ OUTPUT THIRD ORDER INTERCEPT
18 - 27 GHz
10
15
dB
18 - 27 GHz
10
15
dB
34.5
37
dBm
1/
Output Third Order Intercept point minimum performance is measured at 18.0, 23.0, 26.0 GHz, fixed voltage, Vd = 7.0V, Vg = Vg1 value passed from S-parameter testing. Power in per tone = -2.0 dBm. Separation = 0.010 GHz.
TABLE V RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside of carrier plate) BIAS CONDITIONS VD (V) ID (mA) 6 540 PDISS (W) 3.24 RJC (C/W) 23.09 TCH (C) 144.8 TM (HRS) 1.6E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
January 21, 2002
Measured small signal data
6V, 540mA
18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
,
TGA1135B-SCC
S21
-5 -7 -9 -11
S11
S11 (dB)
-13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
-5 -7 -9 -11
S22
S22 (dB)
-13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
January 21, 2002
TGA1135B-SCC
P1dB Measured Data for ~ 18K devices
32 Pout @1dB Compression (dBm) 31 30 29 28 27 26 25 24 18 20 22 24 26 28 Frequency (GHz) 5th 25th 50th 75th 95th
500 450 400 350 Samples 300 250 200 150 100 50 0 30 31 32 33 34 35 36 37 38 39 40 41 42
Pin=-2dBm, Vd=7V/460mA, freq=26GHz
wafer 1 wafer 2 wafer 3
Typical Output TOI Measured Data
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
January 21, 2002
TGA1135B-SCC
VG1
VG2
GND
DQ
VD DET OUT
Q1a 600m
Q2a 1200m PWR DET
RF IN
Q1b 600m
Q2b 1200m
RF OUT
Reference diode 2
Reference diode 1
REF3
GND
VG1
VG2
GND
DQ
VD Note: If drain bias is from one side only, maximum Id is 440mA
REF1
REF2
Note: no DC current allowed into the "DQ" pad
DC Schematic
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6
Product Datasheet
January 21, 2002
TGA1135B-SCC 0.612: VG2
(180x100m)
0.875: DQ
1.253: VD
0.095
DET OUT 2.543 2.641 1.480 0.833 PWR DET
(175x100m)
0.686 RF IN
0.373 RF OUT 0.098 0.000 0.000 REF 3: 0.220 REF 1: 2.360 DQ: 0.875 VG2: 0.612
(180x100m)
VD: 1.253
Dimensions in mm RF I/O Pad: 200x100 mm DC Pads: 105x105 mm Die Area: 3.909 mm2
REF 2: 2.543
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
7
Product Datasheet
January 21, 2002
TGA1135B-SCC
TGA1135B built-in power detector
Vdet
100pF
Vbias
100pF
RF IN
RF OUT
TGA1135B with external test coupler
(amplifier bias connections not shown)
On-chip diode functions as envelope detector External coupler and DC bias required
10
EG1135B measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10K load
10K
Detector voltage (V)
1
Video out (Vdet)
EG1135B
External DC bias 50
C=2pF
0.1
RF OUT
0.01 8 10 12 14 16 18 20 Pout (dBm) 22 24 26 28 30 32
External coupler (-20dB)
RF OUT
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
8
Product Datasheet
January 21, 2002
TGA1135B-SCC
Vg (optional)
0.01F 0.01F DQ 100pF 100pF
Vd
Input TFN
Output TFN
100pF 100pF DQ 0.01F Notes: 1. 1F capacitor on gate, drain lines not shown but required 2. 0.01F capacitor may be connected to "DQ" port as shown, or may be included on drain line 3. Vg connection is recommended on both sides for devices operating at or above P1dB
Vg
0.01F
Vd
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
9
Product Datasheet
January 21, 2002
TGA1135B-SCC
Assembly Process Notes
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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